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翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Dopant Activation ： ウィキペディア英語版 Dopant Activation Dopant Activation is the process of obtaining the desired electronic contribution from impurity species in a semiconductor host. The term is often restricted to the application of thermal energy following the ion implantation of dopants. In the most common industrial example, rapid thermal processing is applied to silicon following the ion implantation of dopants such as phosphorus, arsenic and boron. Vacancies generated at elevated temperature (1200 °C) facilitate the movement of these species from interstitial to substitutional lattice sites while amorphization damage from the implantation process recrystallizes. A relatively rapid process, peak temperature is often maintained for less than one second to minimize unwanted chemical diffusion.〔(New activation anneals help dopants stay put )〕 == References == 〔 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Dopant Activation」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.